Education

2013-2017 PhD, in Electronic and Computer Engineering, The Hong Kong University of Science and Technology (HKUST)

2009-2013 B.Sc. in Physics, Tsinghua University

Working Experiences

2024.5-now Associate Professor in SUSTech

2018.9-2024.4 Assistant Professor in SUSTech

2017.9-2018.9 Postdoctoral Fellowship in HKUST

Research Introduction

Wide-bandgap semiconductor device

GaN power device

Fabrication and process

Semiconductor device physics

2D device simulation and modeling

Reliability and stability

Awards & Honors

*2017 IEEE ISPSD Charitat Award (Best Young Scholar Award)

*2018 Shenzhen Overseas High-Caliber Personnel

*2017-2023 IEEE Trans. Electron Devices Golden Reviewer

*2018-2023 IEEE Electron Device Lett. Golden Reviewer

*2020 IEEE ICSICT Outstanding Youth Scientific and Technological Paper Award

*2020 Second Prize in SUSTech Youth Teaching Competition

Papers

Papers published (^*corresponding author, ^#co-first author, supervised student/postdoc):

1. Jiang, X. Wang, J. Zhao, J. Chen, J. Tang, C. Wang, H. Chen, S. Huang, X. Chen, and M. Hua^*,"Roles of Hole Trap on Gate Leakage of p-GaN HEMTs at Cryogenic Temperatures," in IEEE Electron Device Letters, vol. 44, no. 10, pp. 1612-1615, Oct. 2023, doi: 10.1109/LED.2023.3311395.
2. Zhao^*, J. Byggmästar, H. He, K. Nordlund, F. Djurabekova, and M. Hua^*, "Complex Ga₂O₃ polymorphs explored by accurate and general-purpose machine-learning interatomic potentials," in npj Computational Material, vol. 9, no. 159, Sep. 2023, doi: 10.1038/s41524-023-01117-1.
3. Chen, J. Zhao, S. Feng, L. Zhang, Y. Cheng, H. Liao, Z. Zheng, X. Chen, Z. Gao, K. Chen, and M. Hua^*, "Formation and applications in electronic devices of lattice-aligned gallium oxynitride nanolayer on gallium nitride," in Advanced Materials, vol. 35, no. 12, pp. 2208960, Jan. 2023, doi: 10.1002/adma.202208960. (frontispiece)
4. Z. Jiang, Li, C. Wang, J. Ma, Z. Liu, andM. Hua^*, "Gate-Bias Induced Threshold Voltage (V_TH) Instability in P-N Junction/AlGaN/GaN HEMT," in IEEE Transactions on Electron Devices, vol. 69, no. 7, pp. 3654-3659, July 2022, doi: 10.1109/TED.2022.3177397.
5. Chen, J. Zhao, X. Wang, X. Chen, Z. Zhang^*, and M. Hua^*, "Two-dimensional ferroelectric MoS₂/Ga₂O₃ heterogeneous bilayers with highly tunable photocatalytic and electrical properties," in Nanoscale,vol. 14, pp. 5551-5560, Mar. 2022, doi: 10.1039/D2NR00466F.
6. Zhao^*, X. Wang, H. Chen, Z. Zhang^*, and M. Hua^*, "Two-dimensional Ferroelectric Ga₂O₃Bilayers with Unusual Strain-engineered Interlayer Interactions," in Chemistry of Materials, vol. 34, no. 8, pp. 3648-3658, Apr. 2022, doi: 10.1021/acs.chemmater.1c04245. (cover page)
7. Jiang, M. Hua^*, X. Huang, L. Li, C. Wang, J. Chen, and K. Chen, "Negative Gate Bias Induced Dynamic On-Resistance Degradation in Schottky-Type p-GaN Gate HEMTs," in IEEE Transactions on Power Electronics, vol. 37, no. 5, pp. 6018-6025, Nov. 2021, doi: 10.1109/TPEL.2021.3130767.
8. Zhao^*, J. Byggmästar, Z. Zhang, F. Djurabekova, K. Nordlund, and M. Hua^*, "Phase transition of two-dimensional ferroelectric and paraelectric Ga₂O₃monolayers: A density functional theory and machine learning study," in Phys. Rev. B, vol. 104, no. 5, p. 054107, Aug. 2021, doi: 10.1103/PhysRevB.104.054107.
9. J.Zhao, X. Huang, Y. Yin, Y. Liao, H. Mo, Q. Qian, Y. Guo, X. Chen, Z. Zhang^*, and Hua^*, "Two-Dimensional Gallium Oxide Monolayer for Gas-Sensing Application," in Journal of Physical Chemistry Letters, vol. 12, no. 24, pp. 5813–5820, June 2021, DOI: 10.1021/acs.jpclett.1c01393. 
10. Chen,M. Hua^*, C. Wang, L. Liu, L. Li, J. Wei, L. Zhang, Z. Zheng, K. Chen, "Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs," in IEEE Electron Device Letters, vol. 42, no. 7, pp. 986-989, July 2021, doi: 10.1109/LED.2021.3077081.
11. Hua^*,C. Wang, J. Chen, J. Zhao, S. Yang, L. Zhang, Z. Zheng, J. Wei, K. Chen, "Gate Current Transport in Enhancement-mode p-n Junction/AlGaN/GaN (PNJ) HEMT," in IEEE Electron Device Letters, vol. 42, no. 5, pp. 669-672, May 2021, doi: 10.1109/LED.2021.3068296. 
12. J. Chen, Hua^*, J. Wei, J. He, C. Wang, Z. Zheng, and K. Chen, "OFF-state Drain-voltage-stress-induced V_TH Instability in Schottky-type p-GaN Gate HEMTs," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 9, no. 3, pp. 3686-3694, June 2021, doi: 10.1109/JESTPE.2020.3010408.
13. Y. Liao, Zhang^*, Z. Gao, Q. Qian, and M. Hua^*, "Tunable Properties of Novel Ga₂O₃Monolayer for Electronic and Optoelectronic Applications," in ACS Appl. Mater. Interfaces, vol. 12, no. 27, pp. 30659–30669, Jul. 2020, doi: 10.1021/acsami.0c04173. 
14. Wang,M. Hua^*, J. Chen, S. Yang, Z. Zheng, J. Wei, L. Zhang, and K. Chen, "E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs," in IEEE Electron Device Letters, vol. 41, no. 4, pp. 545-548, April 2020, doi: 10.1109/LED.2020.2977143.
15. Tang^#, Z. Jiang^#, C. Wang, J. Chen, H. Chen, Y. Zhang, Z. Zheng, X. Wang, J. Ma, J. Zhao, J. Liu, Q. Sun, and M. Hua^*, "Bipolar p-FET with Enhanced Conduction Capability on E-mode GaN-on-Si HEMT Platform," in 2023 IEEE International Electron Devices Meeting (IEDM), December 9-13,2023.
16. Wang, H. Chen, Z. Jiang, J. Chen, and M. Hua^*, "Impacts of n-GaN Doping Concentration on Gate Reliability of p-n Junction/AlGaN/GaN HEMTs," 2023 35^th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China, May 28-June 1, 2023.
17. Chen, T. Chen, Z. Jiang, C. Wang, Z. Zheng, J. Wei, K. Chen, and M. Hua^*, "Switching Performance of GaN p-FET-bridge (PFB-) HEMTs Studied with Mixed-mode Device/Circuit Simulations," 2023 35^th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China, May 28-June 1, 2023.
18. Wang, Z. Jiang, J. Chen, J. Zhao, H. Wang, C. Wang, H. Chen, J. Ma, X. Chen, and M. Hua^*, "Threshold Voltage Instability of Schottky-type p-GaN Gate HEMT down to Cryogenic Temperatures," 2023 35^th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China, May 28-June 1, 2023.
19. M. Hua^*, J. Chen, C. Wang, L. Liu, J. Wei, L. Zhang, Z. Zheng, and K. Chen, "E-mode p-FET-bridge HEMT for Higher V_THand Enhanced Stability," 2020 IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, December 12-18, 2020, pp. 23.1.1-23.1.4, doi: 10.1109/IEDM13553.2020. 9371969. 
20. Jiang, M. Hua^*, X. Huang, L. Li, J. Chen and K. Chen, "Impact of OFF-state Gate Bias on Dynamic R_ONof p-GaN Gate HEMT," 2021 33^rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Nagoya, Japan, May 30-June 3, 2021, pp. 47-50, doi: 10.23919/ISPSD50666.2021.9452256.
21. Chen, M. Hua^*, J. Jiang, J. He, J. Wei, and K. Chen, "Impact of Hole-Deficiency and Charge Trapping on Threshold Voltage Stability of p-GaN HEMT under Reverse-bias Stress," 202032^nd Int. Symp. On Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, Sep. 3-7, 2020, pp.18-21, doi: 10.1109/ISPSD46842.2020.9170043.
22. Chen, C. Wang, J. Jiang and M. Hua^*, "Investigation of Time-Dependent V_THInstability Under Reverse-bias Stress in Schottky Gate p-GaN HEMT," 2020 IEEE 9^th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia), Nanjing, China, 2020, pp. 142-145, doi: 10.1109/IPEMC-ECCEAsia48364.2020.9367779.
23. Wang, M. Hua^*, S. Yang, L. Zhang, and K. Chen, "E-mode p-nJunction/AlGaN/GaN HEMTs with Enhanced Gate Reliability," 2020 32^nd Int. Symp. On Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, Sep. 3-7, 2020, pp.18-21, doi: 10.1109/ISPSD46842.2020.9170039.
24. Hua, S. Yang, Z. Zheng, J. Wei, Z. Zhang, and K. Chen, "Effects of Substrate Termination on Reverse-Bias Stress Reliability of Normally-Off Lateral GaN-on-Si MIS-FETs,"2019 31^st Int. Symp. On Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, May 19-23, 2019, pp. 467-470, doi: 10.1109/ISPSD.2019.8757600. 
25. Hua,X. Cai, S. Yang, Z. Zhang, Z. Zheng, J. Wei, N. Wang, and K. Chen, "Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline GaO_xN_1-x Channel," in 2018 IEEE International Electron Devices Meeting (IEDM), Dec. 1-5, 2018, pp. 30.3.1-30.3.4, doi: 10.1109/IEDM.2018.8614687. 
26. Hua, J. Wei, Q. Bao, Z. Zhang, J. He, Z. Zheng, J. Lei, and K. Chen, "Reverse-Bias Stability and Reliability of Hole-Barrier-Free E-mode LPCVD-SiN_x/GaN MIS-FETs," 2017 Int. Electron Device Meeting (IEDM), San Francisco, CA, USA, Dec. 2-6, 2017, pp. 33.2.1-33.2.4, doi: 10.1109/IEDM. 2017.8268489.
27. Hua, Q. Qian, J. Wei, Z. Zhang, G. Tang, and K. J. Chen, "PBTI and NBTI of Fully-recessed E-mode LPCVD-SiN_x/GaN MIS-FETs with PECVD-SiN_xInterfacial Protection Layer," 12^th Int. Conf. on Nitride Semiconductors (ICNS-12), Strasbourg, France, July 24-28, 2017.
28. Hua,Z. Zhang, Q. Qian, J. Wei, Q. Bao, G. Tang, and K. J. Chen, "High-performance Fully-recessed Enhancement-mode GaN MIS-FETs with Crystalline Oxide Interlayer," 2017 29^th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD), Sapporo, Japan, May 28-June 1, 2017, pp. 89-92, doi: 10.23919/ISPSD.2017.7988900.
29. Hua, Y. Lu, S. Liu, C. Liu, K. Fu, Y. Cai, B. Zhang, and K. J. Chen, "TDDB and PBTI Characterizations of Fully-recessed E-mode GaN MIS-FETs with LPCVD-SiN_x/PECVD-SiN_xGate Dielectric Stack," CS MANTECH Conference, Indian Wells, California, USA, May 22-25, 2017.
30. Hua, Z. Zhang, J. Wei, J. Lei, G. Tang, K. Fu, Y. Cai, B. Zhang, and K. J. Chen, "Integration of LPCVD-SiN_xGate Dielectric with Recessed-gate E-mode GaN MIS-FETs: Toward High Performance, High Stability and Long TDDB Lifetime," 2016 Int. Electron Device Meeting (IEDM), San Francisco, CA, USA, Dec. 5-7, 2016, pp. 10.4.1-10.4.4, doi: 10.1109/IEDM.2016.7838388. 
31. Hua, Y. Lu, S. Liu, C. Liu, K. Fu, Y. Cai, B. Zhang, and K. J. Chen, "Compatibility of AlN/SiN_xPassivation with High-Temperature Process," 2016 CS MANTECH Conference, Miami, Florida, USA, May 16-19, 2016.
32. Hua, C. Liu, S. Yang, S. Liu, K. Fu, Z. Dong, Y. Cai, B. Zhang, and K. J. Chen, "Gate Leakage and Time-Dependent Dielectric Breakdown Characteristics of LPCVD-SiN_x/AlGaN/GaN MIS-HEMTs," 2015 11^thInt. Conf. on Nitride Semiconductors (ICNS-11), Beijing, China, Aug. 30- Sept. 4, 2015.
33. Hua, C. Liu, S. Yang, S. Liu, Y. Lu, K. Fu, Z. Dong, Y. Cai, B. Zhang, and K. J. Chen, "650-V GaN-Based MIS-HEMTs Using LPCVD-SiN_xas Passivation and Gate Dielectric," 2015 27^th Symp. On Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China, May 10-14, 2015, pp. 241-244, doi: 10.1109/ISPSD.2015.7123434.

Recruitment Announcement

Prof. Hua’s group recruits research assistant professors, post-doc researchers, research assistants, Ph.D. students, master students, as well as undergraduate interns. Visiting scholars and students are also welcome. Please contact Prof. Hua directly via email (huamy@sustech.edu.cn) if interested in any of the above positions.

Contact Information

Office: Room 226, South Tower, College of Engineering

Email: huamy@sustech.edu.cn