Wide-gap semiconductor materials (e.g., GaN, Ga2O3, SiC) and devices can break the theoretical limits of traditional silicon-based devices, which are an important development direction for the next-generation power electronic devices. Prof. Hua has been researching GaN-based power devices, especially on advanced manufacturing technology, novel structure design, device physics, and reliability/stability investigation. Dr. Hua has published 70+ high-quality journal and conference papers with 1000+ citations, including IEEE EDL, IEEE TED, IEEE IEDM, IEEE ISPSD, et. She won the Charitat Award in 2017. Prof. Hua has joined SUSTech since Sep. 2018 and focuses on next generation wide-bandgap semiconductor device research.
2013-2017 PhD, in Electronic and Computer Engineering, The Hong Kong University of Science and Technology (HKUST)
2009-2013 B.Sc. in Physics, Tsinghua University
2018.9-now Assistant Professor in SUSTech
2017.9-2018.9 Postdoctoral Fellowship in HKUST
Wide-bandgap semiconductor device
GaN power device
Fabrication and process
Semiconductor device physics
2D device simulation and modeling
Reliability and stability
Best Young Researcher (Charitat Award), 2017 IEEE ISPSD
1.M. Hua, J. Chen, C. Wang, L. Liu, J. Wei, L. zhang, Z. Zheng, and Kevin J. Chen, ‘E-mode p-FET-bridge HEMT for Higher VTH and Enhanced Stability’, in 2020 IEEE International Electron Devices Meeting (IEDM), 2020.
2.Chen, M. Hua, J. Jiang, J. He, J. Wei, and Kevin J. Chen, "Reliability and Stability of Normally-off GaN Power MIS-FETs with LPCVD-SiNxGate Dielectric," 2020 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’20), Vienna, Austria, Sep. 3-7, 2020.
3.Wang, M. Hua, S. Yang, L. Zhang, and Kevin J. Chen, "E-mode p-n Junction/AlGaN/GaN HEMTs with Enhanced Gate Reliability," 2020 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’20), Vienna, Austria, Sep. 3-7, 2020.
4.Y. Liao, Zhang, Z. Gao, Q. Qian, and M. Hua*,"Tunable Properties of the Novel Ga2O3 Monolayer for Electronics and Optoelectronics Applications," in ACS Applied Materials & Interfaces, accepted, April 2020.
5.J. Chen, Hua*, J. Wei, J. He, C. Wang, Z. Zheng, and K. J. Chen, " Reverse-bias-stress-induced VTH Instability in Schottky-type p-GaN Gate HEMTs," in IEEE Journal of Emerging and Selected Topics in Power Electronics, accepted, July 2020.
6.Wang,M. Hua*, J. Chen, S. Yang, Z. Zheng, J. Wei, L. Zhang, and K. J. Chen, "E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs," IEEE Electron Device Letters, vol. 41, no. 4, pp. 545-548, April 2020.
7.Hua, S. Yang, Z. Zheng, J. Wei, Z. Zhang, and K. J. Chen, "Effects of Substrate Termination on Reverse-Bias Stress Reliability of Normally-Off Lateral GaN-on-Si MIS-FETs," 2019 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’19), Shanghai, China, May 19-23, 2019.
8.Hua, S. Yang, J. Wei, Z. Zheng, J. He, and K. J. Chen, ‘Hole-Induced Degradation in E-Mode GaN MIS-FETs: Impact of Substrate Terminations’, IEEE Transactions on Electron Devices, vol. 67, no. 1, pp. 217–223, Jan. 2020, doi: 10.1109/TED.2019.2954282.
9.M. Hua, X. Cai, S. Yang, Z. Zhang, Z. Zheng, N. Wang, and K. J. Chen, ‘Enhanced Gate Reliability in GaN MIS-FETs by Converting the GaN channel into Crystalline Gallium Oxynitride’, ACS Applied Elec. Material, 2019.
10.Cai*, M. Hua*, Z. Zhang, S. Yang, Z. Zheng, Y. Cai, K. J. Chen, and N. Wang, ‘Atomic-scale identification of crystalline GaON nanophase for enhanced GaN MIS-FET channel’, Applied Physics Letters, vol. 114, no. 5, p. 053109, Feb. 2019.
11.Hua,X. Cai, S. Yang, Z. Zhang, Z. Zheng, J. Wei, N. Wang, and K. J. Chen, ‘Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline GaOxN1-x Channel’, in 2018 IEEE International Electron Devices Meeting (IEDM), 2018, pp. 30.3.1-30.3.4.
Prof. Hua’s group recruits research assistant professors, post-doc researchers, research assistants, Ph.D. students, master students, as well as undergraduate interns. Visiting scholars and students are also welcome. Please contact Prof. Hua directly via email (firstname.lastname@example.org) if interested in any of the above positions.
Office: Building C, Room 213