Wide-gap semiconductor materials (e.g., GaN, Ga2O3, SiC) and devices can break the theoretical limits of traditional silicon-based devices, which are an important development direction for the next-generation power electronic devices. Prof. Hua has been researching GaN-based power devices, especially on advanced manufacturing technology, novel structure design, device physics, and reliability/stability investigation. Dr. Hua has published 70+ high-quality journal and conference papers with 1000+ citations, including IEEE EDL, IEEE TED, IEEE IEDM, IEEE ISPSD, et. She won the Charitat Award in 2017. Prof. Hua has joined SUSTech since Sep. 2018 and focuses on next generation wide-bandgap semiconductor device research.
Education
2013-2017 PhD, in Electronic and Computer Engineering, The Hong Kong University of Science and Technology (HKUST)
2009-2013 B.Sc. in Physics, Tsinghua University
Working Experiences
2024.5-now Associate Professor in SUSTech
2018.9-2024.4 Assistant Professor in SUSTech
2017.9-2018.9 Postdoctoral Fellowship in HKUST
Research Introduction
Wide-bandgap semiconductor device
GaN power device
Fabrication and process
Semiconductor device physics
2D device simulation and modeling
Reliability and stability
Awards & Honors
*2017 IEEE ISPSD Charitat Award (Best Young Scholar Award)
*2018 Shenzhen Overseas High-Caliber Personnel
*2017-2023 IEEE Trans. Electron Devices Golden Reviewer
*2018-2023 IEEE Electron Device Lett. Golden Reviewer
*2020 IEEE ICSICT Outstanding Youth Scientific and Technological Paper Award
*2020 Second Prize in SUSTech Youth Teaching Competition
Papers
Papers published (*corresponding author, #co-first author, supervised student/postdoc):
- Jiang, X. Wang, J. Zhao, J. Chen, J. Tang, C. Wang, H. Chen, S. Huang, X. Chen, and M. Hua*,"Roles of Hole Trap on Gate Leakage of p-GaN HEMTs at Cryogenic Temperatures," in IEEE Electron Device Letters, vol. 44, no. 10, pp. 1612-1615, Oct. 2023, doi: 10.1109/LED.2023.3311395.
- Zhao*, J. Byggmästar, H. He, K. Nordlund, F. Djurabekova, and M. Hua*, "Complex Ga2O3 polymorphs explored by accurate and general-purpose machine-learning interatomic potentials," in npj Computational Material, vol. 9, no. 159, Sep. 2023, doi: 10.1038/s41524-023-01117-1.
- Chen, J. Zhao, S. Feng, L. Zhang, Y. Cheng, H. Liao, Z. Zheng, X. Chen, Z. Gao, K. Chen, and M. Hua*, "Formation and applications in electronic devices of lattice-aligned gallium oxynitride nanolayer on gallium nitride," in Advanced Materials, vol. 35, no. 12, pp. 2208960, Jan. 2023, doi: 10.1002/adma.202208960. (frontispiece)
- Z. Jiang, Li, C. Wang, J. Ma, Z. Liu, andM. Hua*, "Gate-Bias Induced Threshold Voltage (VTH) Instability in P-N Junction/AlGaN/GaN HEMT," in IEEE Transactions on Electron Devices, vol. 69, no. 7, pp. 3654-3659, July 2022, doi: 10.1109/TED.2022.3177397.
- Chen, J. Zhao, X. Wang, X. Chen, Z. Zhang*, and M. Hua*, "Two-dimensional ferroelectric MoS2/Ga2O3 heterogeneous bilayers with highly tunable photocatalytic and electrical properties," in Nanoscale,vol. 14, pp. 5551-5560, Mar. 2022, doi: 10.1039/D2NR00466F.
- Zhao*, X. Wang, H. Chen, Z. Zhang*, and M. Hua*, "Two-dimensional Ferroelectric Ga2O3Bilayers with Unusual Strain-engineered Interlayer Interactions," in Chemistry of Materials, vol. 34, no. 8, pp. 3648-3658, Apr. 2022, doi: 10.1021/acs.chemmater.1c04245. (cover page)
- Jiang, M. Hua*, X. Huang, L. Li, C. Wang, J. Chen, and K. Chen, "Negative Gate Bias Induced Dynamic On-Resistance Degradation in Schottky-Type p-GaN Gate HEMTs," in IEEE Transactions on Power Electronics, vol. 37, no. 5, pp. 6018-6025, Nov. 2021, doi: 10.1109/TPEL.2021.3130767.
- Zhao*, J. Byggmästar, Z. Zhang, F. Djurabekova, K. Nordlund, and M. Hua*, "Phase transition of two-dimensional ferroelectric and paraelectric Ga2O3monolayers: A density functional theory and machine learning study," in Phys. Rev. B, vol. 104, no. 5, p. 054107, Aug. 2021, doi: 10.1103/PhysRevB.104.054107.
- J.Zhao, X. Huang, Y. Yin, Y. Liao, H. Mo, Q. Qian, Y. Guo, X. Chen, Z. Zhang*, and Hua*, "Two-Dimensional Gallium Oxide Monolayer for Gas-Sensing Application," in Journal of Physical Chemistry Letters, vol. 12, no. 24, pp. 5813–5820, June 2021, DOI: 10.1021/acs.jpclett.1c01393.
- Chen,M. Hua*, C. Wang, L. Liu, L. Li, J. Wei, L. Zhang, Z. Zheng, K. Chen, "Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs," in IEEE Electron Device Letters, vol. 42, no. 7, pp. 986-989, July 2021, doi: 10.1109/LED.2021.3077081.
- Hua*,C. Wang, J. Chen, J. Zhao, S. Yang, L. Zhang, Z. Zheng, J. Wei, K. Chen, "Gate Current Transport in Enhancement-mode p-n Junction/AlGaN/GaN (PNJ) HEMT," in IEEE Electron Device Letters, vol. 42, no. 5, pp. 669-672, May 2021, doi: 10.1109/LED.2021.3068296.
- J. Chen, Hua*, J. Wei, J. He, C. Wang, Z. Zheng, and K. Chen, "OFF-state Drain-voltage-stress-induced VTH Instability in Schottky-type p-GaN Gate HEMTs," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 9, no. 3, pp. 3686-3694, June 2021, doi: 10.1109/JESTPE.2020.3010408.
- Y. Liao, Zhang*, Z. Gao, Q. Qian, and M. Hua*, "Tunable Properties of Novel Ga2O3Monolayer for Electronic and Optoelectronic Applications," in ACS Appl. Mater. Interfaces, vol. 12, no. 27, pp. 30659–30669, Jul. 2020, doi: 10.1021/acsami.0c04173.
- Wang,M. Hua*, J. Chen, S. Yang, Z. Zheng, J. Wei, L. Zhang, and K. Chen, "E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs," in IEEE Electron Device Letters, vol. 41, no. 4, pp. 545-548, April 2020, doi: 10.1109/LED.2020.2977143.
- Tang#, Z. Jiang#, C. Wang, J. Chen, H. Chen, Y. Zhang, Z. Zheng, X. Wang, J. Ma, J. Zhao, J. Liu, Q. Sun, and M. Hua*, "Bipolar p-FET with Enhanced Conduction Capability on E-mode GaN-on-Si HEMT Platform," in 2023 IEEE International Electron Devices Meeting (IEDM), December 9-13,2023.
- Wang, H. Chen, Z. Jiang, J. Chen, and M. Hua*, "Impacts of n-GaN Doping Concentration on Gate Reliability of p-n Junction/AlGaN/GaN HEMTs," 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China, May 28-June 1, 2023.
- Chen, T. Chen, Z. Jiang, C. Wang, Z. Zheng, J. Wei, K. Chen, and M. Hua*, "Switching Performance of GaN p-FET-bridge (PFB-) HEMTs Studied with Mixed-mode Device/Circuit Simulations," 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China, May 28-June 1, 2023.
- Wang, Z. Jiang, J. Chen, J. Zhao, H. Wang, C. Wang, H. Chen, J. Ma, X. Chen, and M. Hua*, "Threshold Voltage Instability of Schottky-type p-GaN Gate HEMT down to Cryogenic Temperatures," 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China, May 28-June 1, 2023.
- M. Hua*, J. Chen, C. Wang, L. Liu, J. Wei, L. Zhang, Z. Zheng, and K. Chen, "E-mode p-FET-bridge HEMT for Higher VTHand Enhanced Stability," 2020 IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, December 12-18, 2020, pp. 23.1.1-23.1.4, doi: 10.1109/IEDM13553.2020. 9371969.
- Jiang, M. Hua*, X. Huang, L. Li, J. Chen and K. Chen, "Impact of OFF-state Gate Bias on Dynamic RONof p-GaN Gate HEMT," 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Nagoya, Japan, May 30-June 3, 2021, pp. 47-50, doi: 10.23919/ISPSD50666.2021.9452256.
- Chen, M. Hua*, J. Jiang, J. He, J. Wei, and K. Chen, "Impact of Hole-Deficiency and Charge Trapping on Threshold Voltage Stability of p-GaN HEMT under Reverse-bias Stress," 202032nd Int. Symp. On Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, Sep. 3-7, 2020, pp.18-21, doi: 10.1109/ISPSD46842.2020.9170043.
- Chen, C. Wang, J. Jiang and M. Hua*, "Investigation of Time-Dependent VTHInstability Under Reverse-bias Stress in Schottky Gate p-GaN HEMT," 2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia), Nanjing, China, 2020, pp. 142-145, doi: 10.1109/IPEMC-ECCEAsia48364.2020.9367779.
- Wang, M. Hua*, S. Yang, L. Zhang, and K. Chen, "E-mode p-nJunction/AlGaN/GaN HEMTs with Enhanced Gate Reliability," 2020 32nd Int. Symp. On Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, Sep. 3-7, 2020, pp.18-21, doi: 10.1109/ISPSD46842.2020.9170039.
- Hua, S. Yang, Z. Zheng, J. Wei, Z. Zhang, and K. Chen, "Effects of Substrate Termination on Reverse-Bias Stress Reliability of Normally-Off Lateral GaN-on-Si MIS-FETs,"2019 31st Int. Symp. On Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, May 19-23, 2019, pp. 467-470, doi: 10.1109/ISPSD.2019.8757600.
- Hua,X. Cai, S. Yang, Z. Zhang, Z. Zheng, J. Wei, N. Wang, and K. Chen, "Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline GaOxN1-x Channel," in 2018 IEEE International Electron Devices Meeting (IEDM), Dec. 1-5, 2018, pp. 30.3.1-30.3.4, doi: 10.1109/IEDM.2018.8614687.
- Hua, J. Wei, Q. Bao, Z. Zhang, J. He, Z. Zheng, J. Lei, and K. Chen, "Reverse-Bias Stability and Reliability of Hole-Barrier-Free E-mode LPCVD-SiNx/GaN MIS-FETs," 2017 Int. Electron Device Meeting (IEDM), San Francisco, CA, USA, Dec. 2-6, 2017, pp. 33.2.1-33.2.4, doi: 10.1109/IEDM. 2017.8268489.
- Hua, Q. Qian, J. Wei, Z. Zhang, G. Tang, and K. J. Chen, "PBTI and NBTI of Fully-recessed E-mode LPCVD-SiNx/GaN MIS-FETs with PECVD-SiNxInterfacial Protection Layer," 12th Int. Conf. on Nitride Semiconductors (ICNS-12), Strasbourg, France, July 24-28, 2017.
- Hua,Z. Zhang, Q. Qian, J. Wei, Q. Bao, G. Tang, and K. J. Chen, "High-performance Fully-recessed Enhancement-mode GaN MIS-FETs with Crystalline Oxide Interlayer," 2017 29th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD), Sapporo, Japan, May 28-June 1, 2017, pp. 89-92, doi: 10.23919/ISPSD.2017.7988900.
- Hua, Y. Lu, S. Liu, C. Liu, K. Fu, Y. Cai, B. Zhang, and K. J. Chen, "TDDB and PBTI Characterizations of Fully-recessed E-mode GaN MIS-FETs with LPCVD-SiNx/PECVD-SiNxGate Dielectric Stack," CS MANTECH Conference, Indian Wells, California, USA, May 22-25, 2017.
- Hua, Z. Zhang, J. Wei, J. Lei, G. Tang, K. Fu, Y. Cai, B. Zhang, and K. J. Chen, "Integration of LPCVD-SiNxGate Dielectric with Recessed-gate E-mode GaN MIS-FETs: Toward High Performance, High Stability and Long TDDB Lifetime," 2016 Int. Electron Device Meeting (IEDM), San Francisco, CA, USA, Dec. 5-7, 2016, pp. 10.4.1-10.4.4, doi: 10.1109/IEDM.2016.7838388.
- Hua, Y. Lu, S. Liu, C. Liu, K. Fu, Y. Cai, B. Zhang, and K. J. Chen, "Compatibility of AlN/SiNxPassivation with High-Temperature Process," 2016 CS MANTECH Conference, Miami, Florida, USA, May 16-19, 2016.
- Hua, C. Liu, S. Yang, S. Liu, K. Fu, Z. Dong, Y. Cai, B. Zhang, and K. J. Chen, "Gate Leakage and Time-Dependent Dielectric Breakdown Characteristics of LPCVD-SiNx/AlGaN/GaN MIS-HEMTs," 2015 11thInt. Conf. on Nitride Semiconductors (ICNS-11), Beijing, China, Aug. 30- Sept. 4, 2015.
- Hua, C. Liu, S. Yang, S. Liu, Y. Lu, K. Fu, Z. Dong, Y. Cai, B. Zhang, and K. J. Chen, "650-V GaN-Based MIS-HEMTs Using LPCVD-SiNxas Passivation and Gate Dielectric," 2015 27th Symp. On Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China, May 10-14, 2015, pp. 241-244, doi: 10.1109/ISPSD.2015.7123434.
Recruitment Announcement
Prof. Hua’s group recruits research assistant professors, post-doc researchers, research assistants, Ph.D. students, master students, as well as undergraduate interns. Visiting scholars and students are also welcome. Please contact Prof. Hua directly via email (huamy@sustech.edu.cn) if interested in any of the above positions.
Contact Information
Office: Room 226, South Tower, College of Engineering
Email: huamy@sustech.edu.cn