Full-Time Faculty

Mengyuan HUA--Assistant Professor

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Wide-gap semiconductor materials (e.g., GaN, Ga2O3, SiC) and devices can break the theoretical limits of traditional silicon-based devices, which are an important development direction for the next-generation power electronic devices. Prof. Hua has been researching GaN-based power devices, especially on advanced manufacturing technology, novel structure design, device physics, and reliability/stability investigation. Dr. Hua has published 70+ high-quality journal and conference papers with 1000+ citations, including IEEE EDL, IEEE TED, IEEE IEDM, IEEE ISPSD, et. She won the Charitat Award in 2017. Prof. Hua has joined SUSTech since Sep. 2018 and focuses on next generation wide-bandgap semiconductor device research.


2013-2017 PhD, in Electronic and Computer Engineering, The Hong Kong University of Science and Technology (HKUST)

2009-2013 B.Sc. in Physics, Tsinghua University

Working Experiences

2018.9-now Assistant Professor in SUSTech

2017.9-2018.9 Postdoctoral Fellowship in HKUST

Research Introduction

Wide-bandgap semiconductor device

GaN power device

Fabrication and process

Semiconductor device physics

2D device simulation and modeling

Reliability and stability

Awards & Honors

Best Young Researcher (Charitat Award), 2017 IEEE ISPSD


1. Jiang, L. Li, C. Wang, J. Ma, Z. Liu, and M. Hua*, “Gate-stress Induced Threshold Voltage Instability in GaN HEMT with PNJ-gate”, IEEE Transactions on Electron Devices, vol. 69, no. 7, pp. 3654-3659, July 2022, doi: 10.1109/TED.2022.3177397.

2. Jiang, M. Hua*, X. Huang, L. Ling, C. Wang, J. Chen and Kevin J. Chen, "Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p-Gan Gate HEMTs," IEEE Transactions on Power Electronics, vol. 37, no. 5, pp. 6018-6025, May 2021, doi: 10.1109/TPEL.2021.3130767.

3. Zhao, J. Byggmästar, Z. Zhang, F. Djurabekova, K. Nordlund, and M. Hua*, “Phase transition of two-dimensional ferroelectric and paraelectric Ga2O3monolayers: A density functional theory and machine learning study”, Phys. Rev. B, vol. 104, no. 5, p. 054107, Aug. 2021, doi: 10.1103/PhysRevB.104.054107.

4. Hua*, J. Chen, C. Wang, L. Liu, L. Li, J. Wei, L. Zhang, Z. Zheng, and Kevin J. Chen, "E-mode p-FET-bridge HEMT: Toward high VTH, low reverse-conduction loss and enhanced stability," in 2021 IEEE 14thInternational Conference on ASIC (ASICON), 2021, pp. 1-4, doi: 10.1109/ASICON52560.2021.9620369 (invited talk)

5. Jiang, M. Hua*, X. Huang, L. Li, J. Chen and K. J. Chen, "Impact of OFF-state Gate Bias on Dynamic RONof p-GaN Gate HEMT," in 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021, pp. 47-50, doi: 10.23919/ISPSD50666.2021.9452256.

6. Zhao, H. Huang, Y. Yin, Y. Liao, H. Mo, Q. Qian, Y. Guo, X. Chen, Z. Zhang, and M. Hua*, "Two-Dimensional Gallium Oxide Monolayer for Gas-Sensing Application," The Journal of Physical Chemistry Letters, 2021, vol. 12, pp. 5513-5820, doi: 10.1021/acs.jpclett.1c01393. (cover letter)

7. Chen, M. Hua*, C. Wang, L. Liu, L. Li, J. Wei, L. Zhang, Z. Zheng, and Kevin J. Chen, “Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs”, IEEE Electron Device Letters, 2021, doi: 10.1109/LED.2021.3077081.

8. Hua*, C. Wang, J. Chen, J. Zhao, J. Wei, L. Zhang, S. Yang, and Kevin J. Chen, “Gate Current Transport in Enhancement-Mode p-n Junction/AlGaN/GaN (PNJ) HEMT”, IEEE Electron Device Letters, vol. 42, no. 5, pp. 669-672, May 2021, doi: 10.1109/LED.2021.3068296.

9. Hua*, J. Chen, C. Wang, L. Liu, J. Wei, L. Zhang, Z. Zheng, and Kevin J. Chen, “E-mode p-FET-bridge HEMT for Higher VTH and Enhanced Stability”, in 2020 IEEE International Electron Devices Meeting (IEDM), 2020.

10. Chen, M. Hua*, J. Jiang, J. He, J. Wei, and Kevin J. Chen, "Reliability and Stability of Normally-off GaN Power MIS-FETs with LPCVD-SiNxGate Dielectric," in 2020 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’20), Vienna, Austria, Sep. 3-7, 2020.

11. Wang, M. Hua*, S. Yang, L. Zhang, and Kevin J. Chen, "E-mode pn Junction/AlGaN/GaN HEMTs with Enhanced Gate Reliability,"  in 2020 Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’20), Vienna, Austria, Sep. 3-7, 2020.

12. Hua*, C. Wang, J. Chen, L. Zhang, Z. Zheng and K. J. Chen, "Gate Reliability and VTHStability Investigations of p-GaN HEMTs," in 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), Kunming, China, 2020, pp. 1-4, doi: 10.1109/ICSICT49897.2020.9278305. (invited talk)

13. Chen,M. Hua*, J. Wei, J. He, C. Wang, Z. Zheng, and K. J. Chen, " OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type p-GaN Gate HEMTs,"  IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 9, no. 3, pp. 3686-3694, June 2021, doi: 10.1109/JESTPE.2020.3010408.

14. Wang, M. Hua*, J. Chen, S. Yang, Z. Zheng, J. Wei, L. Zhang, and K. J. Chen, "E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs," IEEE Electron Device Letters, vol. 41, no. 4, pp. 545-548, April 2020, , doi: 10.1109/LED.2020.2977143.

15. Hua, J. Wei, Q. Bao, Z. Zhang, Z. Zheng, and K. J. Chen, "Dependence of VTHStability on Gate-Bias under Reverse-Bias Stress in E-mode GaN MIS-FET," IEEE Elec. Dev. Lett., vol. 39, no. 3, pp. 413–416, Jan. 2018.

16. Hua, J. Wei, G. Tang, Z. Zhang, X. Cai, N. Wang, and K. J. Chen, "Normally-off LPCVD-SiNx/GaN MIS-FET with Crystalline Oxidation Interlayer,"IEEE Elec. Dev. Lett., vol. 38, no. 7, pp. 929–932, Jul. 2017.

17. Hua, Y. Lu, S. Liu, C. Liu, K. Fu, Y. Cai, B. Zhang, and K. J. Chen, "Compatibility of AlN/SiNxPassivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT," IEEE Elec. Dev. Lett., vol. 37, No. 3, pp. 265-268, 2016.

18. Hua,X. Cai, S. Yang, Z. Zhang, Z. Zheng, J. Wei, N. Wang, and K. J. Chen, ‘Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline GaOxN1-x Channel’, in 2018 IEEE International Electron Devices Meeting (IEDM), 2018, pp. 30.3.1-30.3.4.

19. Hua, J. Wei, Q. Bao, Z. Zhang, J. He, Z. Zheng, J. Lei, and K. J. Chen, "Reverse-Bias Stability and Reliability of Hole-Barrier-Free E-mode LPCVD-SiNx/GaN MIS-FETs," 2017 Int. Electron Device Meeting (IEDM 2017), San Francisco, CA, USA, Dec. 2-6, 2017.

20. Hua, Z. Zhang, J. Wei, J. Lei, G. Tang, K. Fu, Y. Cai, B. Zhang, and K. J. Chen, "Integration of LPCVD-SiNxGate Dielectric with Recessed-gate E-mode GaN MIS-FETs: Toward High Performance, High Stability and Long TDDB Lifetime," 2016 Int. Electron Device Meeting (IEDM 2016), San Francisco, CA, USA, Dec. 5-7, 2016.

Recruitment Announcement

Prof. Hua’s group recruits research assistant professors, post-doc researchers, research assistants, Ph.D. students, master students, as well as undergraduate interns. Visiting scholars and students are also welcome. Please contact Prof. Hua directly via email ( if interested in any of the above positions.

Contact Information

Office: Room 226, South Tower, College of Engineering



Address:South Tower,College of Engineering,
Southern University of Science and Technology

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