Full-Time Faculty

Yuefei Cai--Assitant Professor

Personal Home Page

Dr Yuefei Cai joined SUSTech in July, 2022. His past research focuses on wide bandgap semiconductor, to be specific, GaN devices (design, fabricaiton and characterization) and device monolithic integration. He has given three talks in top conference in compound semiconductor such as IWN, ICNS and CSW, published more than 20 papers in ACS Nano, ACS Photonics, IEEE EDL, APL, etc. His research has received many good comments from peers and been reported by many technolgoy media, such as IEEE spectrum, Semiconductor Today and Compound Semiconductor. He is also IEEE and OSA memeber, reviewer of Photonics Research.


2013.09-2018.06 香港科技大学,电子与计算机工程系,工学博士

2011.09-2013.07 哈尔滨工业大学,物理电子学,工学硕士(学术型,推免)

2007.09-2011.07 哈尔滨工业大学,电子科学与技术,工学学士

Working Experiences

2022.07- 至今        南方科技大学,电子与电气工程系,助理教授

2021.09-2022.07  嘉庚创新实验室,厦门市未来显示技术研究院,副研究员

2018.03-2021.06  英国谢菲尔德大学,电子与电气工程系,博士后副研究员

Research Introduction

third generation semiconductor, wide bandgap semiconductor,

compound semiconductor, GaN devices.


1. Y. Cai, C. Zhu, W. Zhong, P. Feng, S. Jiang and T. Wang, "Monolithically integrated µLEDs/HEMTs microdisplay on a single chip by a direct epitaxial approach", Advanced Materials Technologies, vol.6, no.6, 2100214(2021).(Reported byCompound Semiconductor and LEDInside ) 

2. Y. Cai, J. I. Haggar, C. Zhu, P. Feng, J. Bai and T. Wang, "Direct epitaxial approach to achieve a monolithic on-chip integration of a HEMT and a single Micro-LED with a high modulation bandwidth", ACS Applied Electronic Materialsvol.3, no.1, pp.445-450 (2021).

3. J. Bai, Y. Cai, P. Feng, P. Fletcher, C. Zhu, Y. Tian, and T. Wang, "Ultrasmall, ultracompact and ultrahigh efficient InGaN micro light emitting diodes (μLEDs) with narrow spectral line width",  ACS Nano, vol. 14, no. 6, pp.6906- 6911 (2020).(Reported byCompound Semiconductor)

4.Y. Cai, S. Shen, C. Zhu, X. Zhao, J.Bai and T. Wang, "Non-polar (11-20) GaN metal-semiconductor-metal photo-detectors with superior performance on silicon," ACS Applied Materials & Interfacesvol. 12, no. 22, pp.25031-25036 (2020).

5. S. Jiang#Cai#, P. Feng, S. Shen, X. Zhao, P. Flecher, V. Esendag, K. B. Lee and T. Wang, "Exploringan approach towards the intrinsic limits of GaN electronics," ACS Applied Materials & Interfacesvol. 12, no. 11, pp.12949-12954 (2020).(#: Co-author with equal contributions) 

6. J.Bai, Y. Cai, P. Feng, P. Fletcher,X. Zhao, C. Zhu and T. Wang, "A direct epitaxial approach to achieving ultra-small and ultra-bright InGaN-based micro light emitting diodes (µLEDs)," ACS Photonics,vol. 7, no. 2, pp. 411-415 (2020).  

7. C.Liu, Y. Cai, H. Jiang, and K. M. Lau, "Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxy,"Optics Letters, vol. 43, no. 14, pp. 3401-3404 (2018). (Reported bySemiconductor Today)

8. Y.Cai, X. Zou, C. Liu, and K. M. Lau, "Voltage-controlled GaN HEMT-LED devices as fast-switching and dimmable light emitters," IEEE Electron Device Letters, vol. 39, no.2, pp. 224-227 (2018). (Featured in IEEE Spectrum)

9. Y.Cai, X. Zou, Y. Gao, L. Li, P. K. T. Mok, and K. M. Lau, "Low-flicker lighting from high-voltage LEDs driven by a single converter-free driver," IEEE Photonics Technology Lettersvol. 29, no.19, pp. 1675-1678 (2017).

10. C.Liu#Y. F. Cai#, Z. J. Liu, J. Ma, and K. M. Lau, "Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors," Applied Physics Letters, vol. 106,no.18, pp.181110 (2015). (#: Co-author with equal contributions) (Featured in Semiconductor Today)


Address:South Tower,College of Engineering,
Southern University of Science and Technology

© 2016 All Rights Reserved.网站设计支持 粤ICP备14051456号